Magneto-tunnelling spectroscopy of single self-assembled InAs quantum dots in AlAs

被引：4
|
作者：
Thornton, ASG [1 ]
Ihn, T [1 ]
Main, PC [1 ]
Eaves, L [1 ]
Sheard, FW [1 ]
Henini, M [1 ]
机构：
[1] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 1998年 / 2卷 / 1-4期
关键词：
magneto-tunnelling; InAs; quantum dots; spin splitting;
D O I：
10.1016/S1386-9477(98)00134-9
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We observe the spin splitting of a single InAs quantum dot using magneto-tunnelling spectroscopy. The current-voltage characteristics at low temperature are dominated by a Fermi edge singularity, caused by electron interaction effects. We obtain a value for the g-factor( = 0.82 +/- 0.09) for the quantum dot, with magnetic field applied in the plane of the dot. The magnetic field dependence of the amplitude of the tunnel current provides us with an estimate of the size of the quantum dot wave function (9 nm). (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：657 / 661
页数：5
相关论文
共 50 条
  • [31] Size quantization patterns in self-assembled InAs/GaAs quantum dots
    Colocci, M
    Bogani, F
    Carraresi, L
    Mattolini, R
    Bosacchi, A
    Franchi, S
    Frigeri, P
    Taddei, S
    RosaClot, M
    SUPERLATTICES AND MICROSTRUCTURES, 1997, 22 (01) : 81 - 84
  • [32] Photoluminescence linewidth narrowing of InAs/GaAs self-assembled quantum dots
    Kiravittaya, S
    Nakamura, Y
    Schmidt, OG
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4) : 224 - 228
  • [33] InAs/GaAs self-assembled quantum dots grown by ALMBE and MBE
    Bosacchi, A
    Frigeri, P
    Franchi, S
    Allegri, P
    Avanzini, V
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 771 - 776
  • [34] High potential barrier effects on self-assembled InAs quantum dots
    Jung, S. I.
    Yeo, H. Y.
    Yun, I.
    Leem, J. Y.
    Cho, S. M.
    Kim, J. S.
    Lee, J. I.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 50 (03) : 767 - 770
  • [35] Abnormal photoluminescence behavior of self-assembled InAs quantum dots with bimodal size distribution
    Lee, CM
    Choi, SH
    Seo, JC
    Lee, JI
    Leem, JY
    Han, IK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 (06) : 1615 - 1618
  • [36] Effect of Si Doping in Self-Assembled InAs Quantum Dots on Infrared Photodetector Properties
    Seo, Dong-Bum
    Hwang, Je-hwan
    Oh, Boram
    Kim, Jun Oh
    Lee, Sang Jun
    Kim, Eui-Tae
    KOREAN JOURNAL OF MATERIALS RESEARCH, 2019, 29 (09): : 542 - 546
  • [37] Photoluminescence study on the growth of self-assembled InAs quantum dots: Formation characteristics of bimodal-sized quantum dots
    Jung, S. I.
    Yeo, H. Y.
    Yun, I.
    Leem, J. Y.
    Han, I. K.
    Kim, J. S.
    Lee, J. I.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 33 (01) : 280 - 283
  • [38] Deep level transient spectroscopy study of energy levels in InAs/GaAs self-assembled quantum dots
    Kim, J. S.
    Lee, Y. -I.
    Ha, L.
    Kim, E. K.
    Kim, J. O.
    Lee, S. J.
    Noh, S. K.
    PHYSICS OF SEMICONDUCTORS, 2009, 1199 : 295 - +
  • [39] Electrical characterization of InAs/InP self-assembled quantum dots by deep-level transient spectroscopy
    Kim, EK
    Kim, JS
    Hwang, H
    Park, K
    Yoon, E
    Kim, JH
    Park, IW
    Park, YJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (6B): : 3825 - 3827
  • [40] Fabrication of self-assembled InGaAs, GaAs, and InAs quantum dots by chemical beam epitaxy
    Ro, JR
    Kim, SB
    Lee, EH
    Park, SJ
    MICROELECTRONIC ENGINEERING, 1998, 43-4 : 11 - 18
12345