Dielectric diffuseness and conductivity study of CuNb2O6 incorporated BaTiO3 synthesized by chemical route

被引:10
|
作者
Dhak, Debasis
Dhak, Prasanta
Ghorai, Tanmay
Pramanika, Panchanan [1 ]
机构
[1] Indian Inst Technol, Dept Chem, Kharagpur 721302, W Bengal, India
[2] Serampore Coll, Dept Chem, Serampore 712201, Hooghly, India
关键词
D O I
10.1063/1.2787149
中图分类号
O59 [应用物理学];
学科分类号
摘要
The dielectric ceramics of BaTi1-3xCuxNb2xO3 (BTCN) with x=0.0, 0.1, 0.2, and 0.3 were prepared by chemical route with the help of soluble tartarate complexes of Ti4+ and Nb5+ ions. It was found that the substitution of Cu2+ and Nb5+ at the Ti site of BTCN ceramics caused a diffused phase transition. Discontinuous grain growth accompanied with excellent dielectric diffuseness was found with increasing concentration of substitution. The dielectric diffuseness (gamma) was found to be maximum to 1.92 at the substitution of BTCN, x=0.1. The maximum solubility limit was found up to the entire composition range studied. A dielectric study of these compounds as a function of temperature suggested that with increasing substitution concentration the dielectric constant increased to maximum at x=0.3 with minimum tangent loss and the Curie temperature shifted onwards to the higher temperature side. The bulk conductivity indicated an Arrhenius-type thermally activated process. The variation of ac conductivity as a function of frequency obeyed the Jonscher power law. (C) 2007 American Institute of Physics.
引用
收藏
页数:11
相关论文
共 50 条
  • [41] Ho2O3 Additive Effects on BaTiO3 Ceramics Microstructure and Dielectric Properties
    Paunovic, Vesna
    Mitic, Vojislav V.
    Miljkovic, Miroslav
    Pavlovic, Vera
    Zivkovic, Ljiljana
    SCIENCE OF SINTERING, 2012, 44 (02) : 223 - 233
  • [42] Effects of Bi2O3, Sm2O3 content on the structure, dielectric properties and dielectric tunability of BaTiO3 ceramics
    Jinyu Zhao
    Hongwei Chen
    Meng Wei
    Xiangxiang Dong
    Libin Gao
    Lei Chen
    Jihua Zhang
    Journal of Materials Science: Materials in Electronics, 2019, 30 : 19279 - 19288
  • [43] DEFECT STRUCTURE AND DIELECTRIC-PROPERTIES OF ND2O3 MODIFIED BATIO3
    VEST, RW
    SHAIKH, AS
    AMERICAN CERAMIC SOCIETY BULLETIN, 1984, 63 (08): : 1008 - 1008
  • [44] Effects of Bi2O3, Sm2O3 content on the structure, dielectric properties and dielectric tunability of BaTiO3 ceramics
    Zhao, Jinyu
    Chen, Hongwei
    Wei, Meng
    Dong, Xiangxiang
    Gao, Libin
    Chen, Lei
    Zhang, Jihua
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (21) : 19279 - 19288
  • [45] DFT study of BaTiO3 (001) surface with O and O2 adsorption
    Rakotovelo, G.
    Moussounda, P. S.
    Haroun, M. F.
    Legare, P.
    Rakotomahevitra, A.
    Parlebas, J. C.
    EUROPEAN PHYSICAL JOURNAL B, 2007, 57 (03): : 291 - 297
  • [46] DFT study of BaTiO3 (001) surface with O and O2 adsorption
    G. Rakotovelo
    P. S. Moussounda
    M. F. Haroun
    P. Légaré
    A. Rakotomahevitra
    J. C. Parlebas
    The European Physical Journal B, 2007, 57 : 291 - 297
  • [47] Bi2O3-Modified Ceramics Based on BaTiO3 Powder Synthesized in Water Vapor
    Kholodkova, Anastasia
    Smirnov, Aleksey
    Danchevskaya, Marina
    Ivakin, Yurii
    Muravieva, Galina
    Ponomarev, Sergey
    Fionov, Alexandr
    Kolesov, Vladimir
    INORGANICS, 2020, 8 (02)
  • [48] Dielectric and Ferroelectric Properties of In Situ Synthesized Co(Fe1-xMnx)2O4/BaTiO3 Composite Ceramics
    Zhang, Chunyan
    Miao, Jin
    Wang, Zhenhua
    Yang, Gengtao
    Liu, Xinhui
    Gao, Rongli
    Lei, Xiang
    JOURNAL OF ELECTRONIC MATERIALS, 2022, 51 (11) : 6286 - 6296
  • [49] Dielectric and Ferroelectric Properties of In Situ Synthesized Co(Fe1−xMnx)2O4/BaTiO3 Composite Ceramics
    Chunyan Zhang
    Jin Miao
    Zhenhua Wang
    Gengtao Yang
    Xinhui Liu
    Rongli Gao
    Xiang Lei
    Journal of Electronic Materials, 2022, 51 : 6286 - 6296
  • [50] A study of structural, ferroelectric, ferromagnetic, dielectric properties of NiFe2O4–BaTiO3 multiferroic composites
    Yanqing Liu
    Yuhan Wu
    Dan Li
    Yongjun Zhang
    Jing Zhang
    Jinghai Yang
    Journal of Materials Science: Materials in Electronics, 2013, 24 : 1900 - 1904