Thickness and grain-size dependence of ferroelectric properties in columnar-grained BaTiO3 thin films

被引:16
|
作者
Zhang, Qingnan [1 ]
Su, Yu [1 ]
机构
[1] Beijing Inst Technol, Sch Aerosp Engn, Dept Mech, Beijing 100081, Peoples R China
基金
中国国家自然科学基金;
关键词
DIELECTRIC RESPONSE; ELECTRICAL-PROPERTIES; COMPUTATIONAL MODEL; DOMAIN-STRUCTURE; MICROSTRUCTURE; TRANSITION; EVOLUTION; BEHAVIOR; SRTIO3;
D O I
10.1063/1.5041893
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this work, we investigated the association between the microstructural characteristics and the sizedependent properties in columnar-grained BaTiO3 thin films. Based on the phase-field method, we devised a two-dimensional thin-film model with vertically aligned columnar grains and low-permittivity grain boundaries in between. The size dependence is referring to two aspects: the grain-size dependence and the film-thickness dependence. The calculations for the grain-size dependence (200 down to 20 nm) with a constant thickness of 160 nm showed that the reduction of the grain size results in a continuous decrease in the coercive field, remnant polarization, dielectric constant, and piezoelectric constant. With a constant grain size of 60 nm, the reduction of the film thickness (380 down to 80 nm) leads to decreasing coercive field, remnant polarization, piezoelectric constant, and actuation strain as well as an increasing dielectric constant. We found that the presence of the lowpermittivity grain boundaries plays a crucial role in the observed size dependence. The dilution effect due to its low permittivity is the leading cause for the grain-size dependence, whereas the underlying domain-switching dynamics affected by the grain boundaries takes the lead for the filmthickness dependence. The relation between the grain-boundary influence and the observed size dependence of ferroelectric properties was discussed. Published by AIP Publishing.
引用
收藏
页数:9
相关论文
共 50 条
  • [41] Size dependence on the ferroelectric transition of nanosized BaTiO3 particles
    Yan, Tao
    Shen, Zhi-Gang
    Zhang, Wei-Wei
    Chen, Jian-Feng
    MATERIALS CHEMISTRY AND PHYSICS, 2006, 98 (2-3) : 450 - 455
  • [42] Magnetic behavior and thickness dependence in Co-doped BaTiO3 thin films
    Lin, Yuan-Hua
    Zhang, Songyin
    Deng, Chaoyong
    Zhang, Yi
    Wang, Xiaohui
    Nan, Ce-Wen
    APPLIED PHYSICS LETTERS, 2008, 92 (11)
  • [44] Thickness dependence of structural, optical and luminescence properties of BaTiO3 thin films prepared by RF magnetron sputtering
    L. V. Maneeshya
    V. S. Anitha
    P. V. Thomas
    K. Joy
    Journal of Materials Science: Materials in Electronics, 2015, 26 : 2947 - 2954
  • [46] Thickness dependence of structural, optical and luminescence properties of BaTiO3 thin films prepared by RF magnetron sputtering
    Maneeshya, L. V.
    Anitha, V. S.
    Thomas, P. V.
    Joy, K.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2015, 26 (05) : 2947 - 2954
  • [47] Grain-size effects on the ferroelectric behavior of dense nanocrystalline BaTiO3 ceramics -: art. no. 024107
    Zhao, Z
    Buscaglia, V
    Viviani, M
    Buscaglia, MT
    Mitoseriu, L
    Testino, A
    Nygren, M
    Johnsson, M
    Nanni, P
    PHYSICAL REVIEW B, 2004, 70 (02) : 024107 - 1
  • [48] Specific heat in ferroelectric BaTiO3 epitaxial thin films
    Onodera, A
    Kawamura, Y
    Okabe, T
    Terauchi, H
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1999, 19 (6-7) : 1477 - 1480
  • [49] THIN FERROELECTRIC-FILMS OF BATIO3 ON DOPED SILICON
    PARK, JK
    GRANNEMANN, WW
    FERROELECTRICS, 1976, 10 (1-4) : 217 - 220
  • [50] 180° ferroelectric domains in polycrystalline BaTiO3 thin films
    Kim, IT
    Jang, JW
    Youn, HJ
    Kim, CH
    Hong, KS
    APPLIED PHYSICS LETTERS, 1998, 72 (03) : 308 - 310