Monte Carlo simulation of arsenic ion implantation in (100) single-crystal silicon

被引：23
|
作者：
Yang, SH
Morris, SJ
Tian, SY
Parab, KB
Tasch, AF
机构：
[1] PRC/MER 2.606E, University of Texas at Austin, Austin
来源：
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 1996年 / 9卷 / 01期
关键词：
D O I：
10.1109/66.484282
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper is reported a new physically based Monte Carlo model and simulator for accurate simulation of arsenic ion implantation in (100) single-crystal silicon. A new damage generation model and an improved electronic stopping power model have been developed. These new physically based models greatly improve the capability for predicting arsenic as-implanted profiles. This new Monte Carlo model predicts very well the detailed profile dependence on the implant tilt and rotation angles as well as on the implant dose and energy over the energy range 15-180 keV.
引用
收藏
页码：49 / 58
页数：10
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