Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf0.5Zr0.5O2 FilmY

被引:31
作者
Gao, Zhaomeng [1 ,2 ]
Luo, Yubo [3 ]
Lyu, Shuxian [1 ,2 ]
Cheng, Yan [4 ]
Zheng, Yonghui [4 ]
Zhong, Qilan [4 ]
Zhang, Weifeng [3 ]
Lyu, Hangbing [1 ,2 ]
机构
[1] Chinese Acad Sci, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Henan Univ, Key Lab Photovolta Mat Henan Prov, Kaifeng 475004, Peoples R China
[4] East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China
基金
中国国家自然科学基金;
关键词
PUND measurement; ultra-thin ferroelectric; Hf0.5Zr0.5O2; hysteresis loop; ELECTRORESISTANCE;
D O I
10.1109/LED.2021.3097332
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The characterization of ferroelectricity in ultra-thin ferroelectric (FE) films is highly challenging due to enlarged leakage current and resistive switching (RS) effect. In this study, we investigated the polarization switching properties of 1.5-nm thick Hf0.5Zr0.5O2 (HZO) films via direct hysteresis remnant polarization/voltage (P-V) loop measurement. To reduce the leakage current and eliminate the RS effect, positive-up-negative-down (PUND) measurement was implemented on back-to- back connected complementary cells. Rational hysteresis loops, with remnant polarization of approximately 2 mu C/cm(2), were successfully obtained by directly measuring the polarization switching currents. In this study, we provide direct evidence of the stable ferroelectric property in 1.5-nm thick HZO films, and thereby show a potential prospect of ultimate scalability of HZO films.
引用
收藏
页码:1303 / 1306
页数:4
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