Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf0.5Zr0.5O2 FilmY

被引：31

作者：

Gao, Zhaomeng ^{[1
,2
]}

Luo, Yubo ^{[3
]}

Lyu, Shuxian ^{[1
,2
]}

Cheng, Yan ^{[4
]}

Zheng, Yonghui ^{[4
]}

Zhong, Qilan ^{[4
]}

Zhang, Weifeng ^{[3
]}

Lyu, Hangbing ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Henan Univ, Key Lab Photovolta Mat Henan Prov, Kaifeng 475004, Peoples R China

[4] East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 09期

基金：

中国国家自然科学基金;

关键词：

PUND measurement; ultra-thin ferroelectric; Hf0.5Zr0.5O2; hysteresis loop; ELECTRORESISTANCE;

D O I：

10.1109/LED.2021.3097332

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characterization of ferroelectricity in ultra-thin ferroelectric (FE) films is highly challenging due to enlarged leakage current and resistive switching (RS) effect. In this study, we investigated the polarization switching properties of 1.5-nm thick Hf0.5Zr0.5O2 (HZO) films via direct hysteresis remnant polarization/voltage (P-V) loop measurement. To reduce the leakage current and eliminate the RS effect, positive-up-negative-down (PUND) measurement was implemented on back-to- back connected complementary cells. Rational hysteresis loops, with remnant polarization of approximately 2 mu C/cm(2), were successfully obtained by directly measuring the polarization switching currents. In this study, we provide direct evidence of the stable ferroelectric property in 1.5-nm thick HZO films, and thereby show a potential prospect of ultimate scalability of HZO films.

引用

页码：1303 / 1306

页数：4

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