XRD and photoluminescence studies of pure and In2O3 doped ZnO nanophases

被引:1
|
作者
Boulares, N [1 ]
Guergouri, K
Tabet, N
Lusson, A
Sibieude, F
Monty, C
机构
[1] Univ Mentouri, Dept Phys, Constantine 25000, Algeria
[2] King Fahd Univ Petr & Minerals, Dept Phys, Dhahran 31260, Saudi Arabia
[3] CNRS, Phys Solides Lab, F-92190 Meudon, France
[4] CNRS Odeillo, Inst Sci & Genie Mat & Procedes, F-66120 Font Romeu, France
来源
CROSS-DISCIPLINARY APPLIED RESEARCH IN MATERIALS SCIENCE AND TECHNOLOGY | 2005年 / 480卷
关键词
ZnO; nanomaterials; photoluminescence; XRD; doping;
D O I
10.4028/www.scientific.net/MSF.480-481.393
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
ZnO oxide is a promising material for optoelectronics because of its wide and direct gap (Eg=3.4 eV). Pure and doped zinc oxide powders of various grain sizes have been synthesized by vaporisation-condensation method using a solar furnace. The initial powders contained from 0 to 5 In2O3 mol %. X-ray diffraction technique (XRD) has been used to measure the lattice parameter and the grain size as a function of the composition, the results show the appearance of the spinel phase Zn5In2O8 in the micopowders and the decrease of the grain size of nanopowders as the In concentration increases for all considered compositions. The photoluminescence spectra revealed the presence of two main transitions at 3.31 and 3.36 eV, a shift of the excitonic peaks towards the lower energies, a drastic reduction of the exciton bound to donor emission from the doped material and a large broadening of the excitonic emission in In doped nanopowder.
引用
收藏
页码:393 / 398
页数:6
相关论文
共 50 条
  • [41] Photoluminescence Studies of Curcumin doped ZnO Nanoparticles
    Patra, Digambara
    Moussawi, Rasha N.
    2015 IEEE 15TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2015, : 374 - 377
  • [42] Magnetic behavior of Fe doped In2O3
    Kohiki, S
    Murakawa, Y
    Hori, K
    Shimooka, H
    Tajiri, T
    Deguchi, H
    Oku, M
    Arai, M
    Mitome, M
    Bando, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (28-32): : L979 - L981
  • [43] Physical properties of pure In2O3 thin films
    Kaleemulla, S.
    Reddy, A. Sivasankar
    Uthanna, S.
    Reddy, P. Sreedhara
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2008, 2 (12): : 782 - 787
  • [44] THERMOELECTRIC PROPERTIES OF Ge DOPED In2O3
    Berardan, David
    Guilmeau, Emmanuel
    Maignan, Antoine
    Raveau, Bernard
    DEVELOPMENTS IN STRATEGIC MATERIALS, 2009, 29 (10): : 13 - 23
  • [45] Magnetic and Transport Properties of n-type Fe Doped In2O3 and ZnO Films
    Ma, Y. W.
    Huang, X. L.
    Liu, X.
    Yi, J. B.
    Leong, K. C.
    Chan, Lap
    Li, T.
    Bao, N. N.
    Ding, J.
    NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2012, 4 (06) : 641 - 644
  • [46] EPR, FTIR, optical absorption and photoluminescence studies of Fe2O3 and CeO2 doped ZnO-Bi2O3-B2O3 glasses
    Singh, Shiv Prakash
    Chakradhar, R. P. S.
    Rao, J. L.
    Karmakar, Basudeb
    JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 493 (1-2) : 256 - 262
  • [47] Sulfidation Mechanism of Pure and Cu-Doped ZnO Nanoparticles at Moderate Temperature: TEM and In Situ XRD Studies
    Bezverkhyy, Igor
    Skrzypski, Jonathan
    Safonova, Olga
    Bellat, Jean-Pierre
    JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (27): : 14423 - 14430
  • [48] Orientation relationships in multilayer ZnO/In2O3 structures
    G. F. Volodina
    V. F. Zhitar’
    S. P. Muntyan
    D. Z. Grabko
    O. A. Shikimaka
    Inorganic Materials, 2007, 43 : 720 - 723
  • [49] Origin and quantification of the ultimate carrier concentration limits in In2O3 and Sn-doped In2O3
    Klein, Andreas
    Frebel, Alexander
    Creutz, Kim Alexander
    Huang, Binxiang
    PHYSICAL REVIEW MATERIALS, 2024, 8 (04)
  • [50] Degenerately Mo-doped In2O3 nanowire arrays on In2O3 microwires with metallic behaviors
    Wan, Qing
    Huang, Jin
    Lu, Aixia
    Sun, Jia
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (02)