14GHz MEMS 4-bit phase, shifter on silicon

被引:0
|
作者
Kingsley, N [1 ]
Kirby, P [1 ]
Ponchak, G [1 ]
Papapolymerou, J [1 ]
机构
[1] Georgia Inst Technol, Atlanta, GA 30332 USA
关键词
MEMS; phase shifter; multi-bit; switches;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this abstract we describe the work in progress on a 4-bit coplanar waveguide (CPW) MEMS phase shifter simulated, fabricated, and measured at 14 GHz on 400 mu m high-resistivity silicon (epsilon(r) = 11.7). Simulated results using a full wave simulator predict a return loss better than - 19 dB and isolation better than -0.1 dB for a one bit phase shifter using perfectly conducting lines. Measurement results for single MEMS switches have shown -22 dB return loss. and -.095 dB isolation in the UP (not activated) state and -0.83 dB return loss and -14.5 dB isolation in the DOWN (activated) state. It has also been shown that the single bit phase shifters exhibit accurate phase shifts, but higher than expected loss.
引用
收藏
页码:326 / 328
页数:3
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