High-resolution Raman temperature measurements in GaAs p-HEMT multifinger devices

被引：22
|
作者：
Sarua, Andrei
Bullen, Alistair
Haynes, Martin
Kuball, Martin
机构：
[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England
[2] SELEX Sensors & Airborne Syst Ltd, Luton LU1 3PG, Beds, England
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 08期
基金：
英国工程与自然科学研究理事会;
关键词：
FETs; gallium compounds; pseudomorphic-HEMTs (p-HEMTs); Raman spectroscopy; temperature;
D O I：
10.1109/TED.2007.901349
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Self-heating in multifinger GaAs pseudomorphic-HEMT devices was investigated by micro-Raman spectroscopy. The device temperature was probed on the die as a function of applied bias, external heating, and device geometry. The temperature of the top GaAs layer was recorded inside the source-drain gap, as well as on the device periphery using 488-nm laser excitation. Obtained Raman temperatures were found to be higher than infrared thermography results, which is due to the improved-spatial resolution of micro-Raman spectroscopy. Thermal resistance and crosstalk in the multifinger devices was evaluated as a function of thermal stress and finger pitch.
引用
收藏
页码：1838 / 1842
页数：5
相关论文
共 50 条
  • [21] TEMPERATURE-DEPENDENCE OF THE BANDWIDTHS AND FREQUENCIES OF SOME ANTHRACENE PHONONS - HIGH-RESOLUTION RAMAN MEASUREMENTS
    OUILLON, R
    RANSON, P
    CALIFANO, S
    CHEMICAL PHYSICS, 1984, 91 (01) : 119 - 131
  • [22] High efficiency, high switching speed, AlGaAs/GaAs P-HEMT DC-DC converter for integrated power amplifier modules
    Peng, Han
    Pala, Vipindas
    Wright, Peter
    Chow, T. Paul
    Hella, Mona Mostafa
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2011, 66 (03) : 331 - 348
  • [23] High spatial resolution micro-Raman temperature measurements of nitride devices (FETs and light emitters)
    Kuball, M
    Pomeroy, JW
    Rajasingam, S
    Sarua, A
    Uren, MJ
    Martin, T
    Lell, A
    Härle, V
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (05): : 824 - 831
  • [24] Monitoring Core Measurements With High-Resolution Temperature Arrays
    Howard, James J.
    Hester, Keith C.
    PETROPHYSICS, 2019, 60 (02): : 297 - 304
  • [25] HIGH-RESOLUTION RAMAN MEASUREMENTS OF THE TEMPERATURE-DEPENDENCE OF THE PHONON LINEWIDTH IN LITHIUM FORMATE MONOHYDRATE CRYSTALS
    JORDAN, M
    JODL, HJ
    MAIER, M
    CHEMICAL PHYSICS, 1990, 147 (01) : 155 - 163
  • [26] 40Gbit/s high voltage modulator driver in P-HEMT technology
    Leich, M
    Ludwig, M
    Hülsmann, A
    Hurm, V
    Steinhagen, F
    Thiede, A
    Schlechtweg, M
    ELECTRONICS LETTERS, 1999, 35 (21) : 1842 - 1844
  • [27] Compact and wideband GaAs P-HEMT distributed amplifier IC based on a micro-machined CPW
    Yang, Sung-Gi, 2000, IEEE, Piscataway, NJ, United States (01):
  • [28] HIGH-RESOLUTION RAMAN SPECTROMETER
    NECHAEV, SY
    PONOMAREV, YN
    KVANTOVAYA ELEKTRONIKA, 1975, 2 (07): : 1400 - 1402
  • [29] High performance 0.25 μm non-recessed self-aligned gate GaAs P-HEMT with improved yield and uniformity
    Yang, SG
    Kim, DH
    Seo, KS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 33 : S374 - S378
  • [30] Effect of Substrate Misorientation on the Properties of p-HEMT GaAs-Based Nanoheterostructures Formed during MOCVD Epitaxy
    Boldyrevskii, P. B.
    Filatov, D. O.
    Belyakov, V. A.
    Gorshkov, A. P.
    Makartsev, I. V.
    Nezhdanov, A. V.
    Revin, M. V.
    Filatov, A. D.
    Junin, P. A.
    TECHNICAL PHYSICS, 2024, 69 (03) : 485 - 490
12345