High-resolution Raman temperature measurements in GaAs p-HEMT multifinger devices

被引：22
|
作者：
Sarua, Andrei
Bullen, Alistair
Haynes, Martin
Kuball, Martin
机构：
[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England
[2] SELEX Sensors & Airborne Syst Ltd, Luton LU1 3PG, Beds, England
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 08期
基金：
英国工程与自然科学研究理事会;
关键词：
FETs; gallium compounds; pseudomorphic-HEMTs (p-HEMTs); Raman spectroscopy; temperature;
D O I：
10.1109/TED.2007.901349
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Self-heating in multifinger GaAs pseudomorphic-HEMT devices was investigated by micro-Raman spectroscopy. The device temperature was probed on the die as a function of applied bias, external heating, and device geometry. The temperature of the top GaAs layer was recorded inside the source-drain gap, as well as on the device periphery using 488-nm laser excitation. Obtained Raman temperatures were found to be higher than infrared thermography results, which is due to the improved-spatial resolution of micro-Raman spectroscopy. Thermal resistance and crosstalk in the multifinger devices was evaluated as a function of thermal stress and finger pitch.
引用
收藏
页码：1838 / 1842
页数：5
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