The Influence of Carrier Dynamics on Double-State Lasing in Quantum Dot Lasers at Variable Temperature

被引：0
|
作者：
Korenev, V. V. [1 ]
Savelyev, A. V. [1 ]
Zhukov, A. E. [1 ]
Omelchenko, A. V. [1 ]
Maximov, M. V. [1 ]
机构：
[1] St Petersburg Acad Univ RAS, St Petersburg 194021, Russia
来源：
16TH RUSSIAN YOUTH CONFERENCE ON PHYSICS AND ASTRONOMY (PHYSICA.SPB/2013) | 2014年 / 572卷
关键词：
EMISSION; POWER;
D O I：
10.1088/1742-6596/572/1/012034
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
It is shown in analytical form that the carrier capture from the matrix as well as carrier dynamics in quantum dots plays an important role in double-state lasing phenomenon. In particular, the de-synchronization of hole and electron captures allows one to describe recently observed quenching of ground-state lasing, which takes place in quantum dot lasers operating in double-state lasing regime at high injection. From the other side, the detailed analysis of charge carrier dynamics in the single quantum dot enables one to describe the observed light-current characteristics and key temperature dependences.
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页数：8
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