Influence of seed layer treatment on ZnO growth morphology and their device performance in dye-sensitized solar cells

被引:13
|
作者
Kumar, R. Saravana [1 ]
Sudhagar, P. [2 ]
Matheswaran, P. [1 ]
Sathyamoorthy, R. [1 ]
Kang, Yong Soo [2 ]
机构
[1] Kongunadu Arts & Sci Coll, Dept Phys, Coimbatore 641029, Tamil Nadu, India
[2] Hanyang Univ, Energy Mat Lab, WCU Program, Dept Energy Engn, Seoul 133791, South Korea
来源
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2010年 / 172卷 / 03期
关键词
Zinc oxide; Film deposition; Surface morphology; Semiconductors; Ultrasonic rinsing; Solar cells; IONIC LIQUIDS; NANORODS; RECOMBINATION; TEMPERATURE; FABRICATION; ELECTRODES; NANOWIRES; EVOLUTION; SUBSTRATE; ARRAYS;
D O I
10.1016/j.mseb.2010.05.032
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The surface modification of the ZnO seed layer by ultrasonic mediated rinsing (UMR) was realized as an efficient tool for growing highly branched hierarchical ZnO nanorods through multistage approach. The hierarchical ZnO nanostructure achieved through UMR approach was performed as the photoanodes in dye-sensitized solar cells (DSSCs). The DSSC based on the novel branched network resulted in energy conversion efficiency (eta) of 1.1% (J(sc) = 4.7 mA cm(-2)). The improved device performance was ascribed to the (a) high internal surface area for efficient dye adsorption, (b) rapid electron pathway for charge transport from ZnO to transparent conducting oxide (TCO) substrate and (c) producing random multiple scattering of the light within the hierarchical network leading to photon localization, thereby increasing the probability of the interaction between the photons and the dye molecules of the branched network. The beneficial effect of the UMR approach was distinguished by fabricating DSSCs based on randomly oriented ZnO nanorods prepared by conventional rinsing (CR), which offered lower conversion efficiency eta = 0.7% (J(sc) = 3.8 mA cm(-2)). The exploration of novel hierarchical ZnO nanorods grown in the present work by the low temperature solution growth techniques may pave way to bring out photoanode material on flexible substrates for the fast growing DSSCs devices. (C) 2010 Elsevier By. All rights reserved.
引用
收藏
页码:283 / 288
页数:6
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