New Structural Picture of the Ge2Sb2Te5 Phase-Change Alloy

被引:67
|
作者
Liu, X. Q. [1 ]
Li, X. B. [2 ]
Zhang, L. [1 ]
Cheng, Y. Q. [3 ]
Yan, Z. G. [1 ]
Xu, M. [3 ]
Han, X. D. [1 ]
Zhang, S. B. [2 ,4 ]
Zhang, Z. [1 ,5 ,6 ]
Ma, E. [3 ]
机构
[1] Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China
[2] Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China
[3] Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA
[4] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
[5] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[6] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China
关键词
OPTICAL MEMORY; THIN-FILMS; CRYSTALLIZATION; SEMICONDUCTORS; DISK;
D O I
10.1103/PhysRevLett.106.025501
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Using electron microscopy and diffraction techniques, as well as first-principles calculations, we demonstrate that as much as 35% of the total Ge atoms in the cubic phase of Ge2Sb2Te5 locate in tetrahedral environments. The Ge-vacancy interactions play a crucial stabilizing role, leading to Ge-vacancy pairs and the sharing of vacancies that clusters tetrahedral Ge into domains. The Ge2Sb2Te5 structure with coexisting octahedral and tetrahedral Ge produces optical and structural properties in good agreement with experimental data and explains the property contrast as well as the rapid transformation in this phase-change alloy.
引用
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页数:4
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