Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy

被引：4

作者：

Kanegae, Kazutaka ^{[1
]}

Narita, Tetsuo ^{[2
]}

Tomita, Kazuyoshi ^{[2
]}

Kachi, Tetsu ^{[3
]}

Horita, Masahiro ^{[3
,4
]}

Kimoto, Tsunenobu ^{[1
]}

Suda, Jun ^{[1
,3
,4
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan

[2] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

[3] Inst Mat & Syst Sustainabil IMaSS, Nagoya, Aichi 4648601, Japan

[4] Nagoya Univ, Dept Elect, Nagoya, Aichi 4648601, Japan

来源：

APPLIED PHYSICS EXPRESS | 2021年 / 14卷 / 09期

关键词：

Gallium nitride; deep level; ICTS; carbon acceptor; hole trap; YELLOW LUMINESCENCE; EMITTING-DIODES; DEFECTS; GREEN; BLUE;

D O I：

10.35848/1882-0786/ac16ba

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ratio of the photoionization cross sections (sigma(o)(n)/sigma(o)(p) <i ) of carbon substituting at the nitrogen site [C-N (0/-)] in n-type GaN, which is detected as a hole trap H1 (E-V + 0.85 eV) under sub-bandgap-light irradiation (390 nm), is determined with isothermal capacitance transient spectroscopy (ICTS). The current-injection ICTS and the sub-bandgap-light-excited ICTS were compared for the same p(+)-n junction diode, whereby the hole occupancy ratio (f(T)) was obtained. Analysis of the dependence of f(T) on the temperature gave sigma(o)(n)/sigma(o)(p) of 3.0 was then used to estimate the charge state of C-N (0/-) under sub-bandgap-light irradiation. (c) 2021 The Japan Society of Applied Physics

引用

页数：4