Ferroelectric properties of Bi4Zr0.5Ti2.5O12 thin films prepared on LaNiO3 bottom electrode by sol-gel method

The Bi4Zr0.5Ti2.5O12 (BZT) thin films were fabricated on the LaNiO3 bottom electrode using sol-gel method. The structure and morphology of the films were characterized using X-ray diffraction, AFM and SEM. The results show that the films have a perovskite phase and dense microstructure. The 2P(r) and 2V(c) of the Pt/BZT/LaNiO3 capacitor are 28.2 mu C/cm(2) and 14.7 V respectively at an applied voltage of 25 V. After the switching of 1 x 10(10) cycles, the P-r value decreases to 87% of its pre-fatigue values. The dielectric constant (epsilon) and the dissipation factor (tan delta) of the BZT thin films are about 204 and 0.029 at 1 kHz, respectively. The films show good insulating behavior according to the test of leakage current. The clockwise C-V hysteresis curve observed shows that the Pt/BZT/LaNiO3 structure has a memory effect because of the BZT film's ferroelectric polarization.