Diffusion induced recrystallization of TiC

被引：12
作者：
Chae, KW
Hwang, CS
Kim, DY
Cho, SJ
机构：
[1] SEOUL NATL UNIV, COLL ENGN, DEPT INORGAN MAT ENGN, SEOUL 151742, SOUTH KOREA
[2] KOREA RES INST STAND & SCI, TAEJON 305606, SOUTH KOREA
来源：
ACTA MATERIALIA | 1996年 / 44卷 / 05期
关键词：
D O I：
10.1016/1359-6454(95)00325-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
When large TiC particles (30 mu m in average) are embedded in Cr3C2 powders and heat-treated at 1550 degrees C, recrystallization occurs from the surface of the TiC particles, and they are finally replaced by an entirely new set of (Ti,Cr)C alloy grains. The observed recrystallization is greatly suppressed when ZrC is added in the Cr3C2 matrix. The results are in agreement with the prediction that a lattice mismatch due to the diffusion of Cr and resultant formation of misfit dislocations are the major cause of recrystallization. The diffusion induced recrystallization (DIR) process is observed in detail by using a transmission electron microscope.
引用
收藏
页码：1793 / 1799
页数：7
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