High mobility strained ge pMOSFETs with high-κ/metal gate

被引：37
|
作者：
Nicholas, Gareth
Grasby, T. J.
Lgoni, D. J. E. Fu
Beer, C. S.
Parsons, J.
Meuris, M.
Heyns, M. M.
机构：
[1] IMEC, B-3001 Louvain, Belgium
[2] Univ Warwick, Coventry CV4 7AL, W Midlands, England
[3] AdvanceSis Ltd, Coventry CV4 7EZ, W Midlands, England
来源：
IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 09期
关键词：
germanium (Ge); high mobility; high-kappa; MOSFET; strain;
D O I：
10.1109/LED.2007.903405
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Compressively strained Ge long channel ring-type pMOSFETs with high-kappa Si/SiO2/HfO2/TiN gate stacks are fabricated on Si0.2Ge0.8 virtual substrates. Effective oxide thickness is approximately 1.4 nm with low gate leakage current. A peak hole mobility of 640 cm(2)/V center dot s and up to a four times enhancement over the Si/SiO2 universal curve are observed. Parasitic conduction within the Si-cap layers degrades the mobility at large vertical fields, although up to a 2.5 times enhancement over universal remains at a field of 0.9 MV/cm.
引用
收藏
页码：825 / 827
页数：3
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