Application of stain etched porous silicon in c-Si solar cells

In this work application of porous silicon (PS) to c-Si solar cells is presented. The PS layer is formed between the fingers of of the solar cells with PS between the grid the Al grid contact by the method of stain etching. The short circuit current, I-SC, contacts increases of 30-40% comparing with the solar cell without PS. The open circuit voltage decreases a little probably due to decreasing doping concentration of P in n(+)-diffused layer after-stain etching, when 80 nm of it is converted to PS. The value of a fill factor does not change significantly. The spectral dependence of I-SC demonstrates that it increases in the whole spectral region. This could be related to a decrease in reflectivity and partially to an increase in transparency of the emitter after PS formation. The efficiency of solar cells increases of about 25-30%.