共 43 条
- [23] Vacancy formation energy of silicon determined by a new quenching method JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (8B): : L854 - L856
- [27] Impurity dependence of vacancy formation energy in silicon determined by a new quenching method JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (10A): : L1034 - L1036