Impact of electrode roughness on metal-insulator-metal tunnel diodes with atomic layer deposited Al2O3 tunnel barriers

被引：60

作者：

Alimardani, Nasir ^{[1
]}

Cowell, E. William, III ^{[1
]}

Wager, John F. ^{[1
]}

Conley, John F., Jr. ^{[1
]}

Evans, David R. ^{[2
]}

Chin, Matthew ^{[3
]}

Kilpatrick, Stephen J. ^{[3
]}

Dubey, Madan ^{[3
]}

机构：

[1] Oregon State Univ, Sch EECS, Kelley Engn Ctr 1148, Corvallis, OR 97331 USA

[2] Sharp Labs Amer Inc, Camas, WA 98607 USA

[3] USA, Res Lab, Adelphi, MD 20783 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2012年 / 30卷 / 01期

基金：

美国国家科学基金会;

关键词：

ANTENNA;

D O I：

10.1116/1.3658380

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Metal-insulator-metal (MIM) tunnel diodes on a variety of high and low work function metals with various levels of root-mean-square roughness are fabricated using high quality atomic layer deposited Al2O3 as the insulating tunnel barrier. It is found that electrode surface roughness can dominate the current versus voltage characteristics of MIM diodes, even overwhelming the impact of metal work function. Devices with smoother bottom electrodes are found to produce current versus voltage behavior with higher asymmetry and better agreement with Fowler-Nordheim tunneling theory, as well as a greater percentage of functioning devices. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3658380]

引用

页数：5

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