High performances of InP channel power HEMT at 94GHz

被引：3
|
作者：
Medjdoub, F [1 ]
Zaknoune, M [1 ]
Wallart, X [1 ]
Gaquière, C [1 ]
Theron, D [1 ]
机构：
[1] CNRS, Inst Elect Microelect & Nanotecchnol, Dept Hyperfrequences & Semicond, F-59652 Villeneuve Dascq, France
来源：
ELECTRONICS LETTERS | 2005年 / 41卷 / 25期
关键词：
D O I：
10.1049/el:20053068
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High power performances at 94 GHz using a large bandgap InP channel high electron mobility transistor (HEMT) on InP substrate containing an InP/AlInAs composite barrier are reported. This 0.1 mu m gate HEMT exhibits excellent RF characteristics with cutoff frequencies F-t of 105 GHz and F-mag of 340 GHz which represent the highest frequency performances ever reached for an InP channel HEMT. The first power results demonstrated a maximum output power of 200 mW/mm at 2.5 V of drain voltage with 3.8 dB power gain and power added efficiency of 13.7%. This structure is very promising at such frequency.
引用
收藏
页码：1406 / 1408
页数：3
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