High performances of InP channel power HEMT at 94GHz

被引：3

作者：

Medjdoub, F ^{[1
]}

Zaknoune, M ^{[1
]}

Wallart, X ^{[1
]}

Gaquière, C ^{[1
]}

Theron, D ^{[1
]}

机构：

[1] CNRS, Inst Elect Microelect & Nanotecchnol, Dept Hyperfrequences & Semicond, F-59652 Villeneuve Dascq, France

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 25期

关键词：

D O I：

10.1049/el:20053068

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High power performances at 94 GHz using a large bandgap InP channel high electron mobility transistor (HEMT) on InP substrate containing an InP/AlInAs composite barrier are reported. This 0.1 mu m gate HEMT exhibits excellent RF characteristics with cutoff frequencies F-t of 105 GHz and F-mag of 340 GHz which represent the highest frequency performances ever reached for an InP channel HEMT. The first power results demonstrated a maximum output power of 200 mW/mm at 2.5 V of drain voltage with 3.8 dB power gain and power added efficiency of 13.7%. This structure is very promising at such frequency.

引用

页码：1406 / 1408

页数：3

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