Chemical route to ferroelectric thin film capacitors

被引：4

作者：

Mercurio, JP ^{[1
]}

Yi, JH ^{[1
]}

Thomas, P ^{[1
]}

Manier, M ^{[1
]}

机构：

[1] Univ Limoges, Fac Sci, Lab Mat Ceram & Traitements Surface, ESA 6015, F-87060 Limoges, France

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 1999年 / 19卷 / 6-7期

关键词：

films; sol-gel processes; Aurivillius phases; ferroelectric properties;

D O I：

10.1016/S0955-2219(98)00462-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

For the first time the fabrication of ferroelectric SrBi2(Ta,Nb)(2)O-9 thin film capacitors with RuO2 electrodes is conducted using a full chemical route. SrBi2(Ta,Nb)(2)O-9 sols were obtained from niobium and tantalum ethoxides mixed with bismuth and strontium 2-ethylhexanoates. RuO2 sols were prepared by dissolving an aqueous solution of ruthenium nitrosylnitrate into 2-methoxyethanol. Capacitors were fabricated by spin coating the precursor solutions on silicon wafers according to the Si/RuO2/ SrBi2(Ta,Nb)(2)O-9/RuO2 sequence. Fully crystallized crack-free materials (RuO2 and SrBi2(Ta,Nb)(2)O-9) were obtained bq, annealing at 700 degrees C for 2 h. Hysteresis loops (3-10 V) are similar to those observed using platinum electrodes. (C) 1999 Elsevier Science Limited. All rights reserved.

引用

页码：1439 / 1442

页数：4

共 50 条

[21] Direct studies of domain switching dynamics in thin film ferroelectric capacitors
Gruverman, A
Rodriguez, BJ
Dehoff, C
Waldrep, JD
Kingon, AI
Nemanich, RJ
Cross, JS
APPLIED PHYSICS LETTERS, 2005, 87 (08)
[22] Polarization change in ferroelectric thin film capacitors under external stress
Zhu, H.
Chu, D.P.
Fleck, N.A.
Rowley, S.E.
Saxena, S.S.
Journal of Applied Physics, 2009, 105 (06):
[23] TEMPERATURE DEPENDENT FATIGUE RATES IN THIN-FILM FERROELECTRIC CAPACITORS
Brennan, Ciaran J.
Parrella, Ronald D.
Larsen, Duane E.
FERROELECTRICS, 1994, 151 (01) : 33 - 38
[24] A PHYSICAL MODEL FOR THE ELECTRICAL HYSTERESIS OF THIN-FILM FERROELECTRIC CAPACITORS
BRENNAN, CJ
FERROELECTRICS, 1992, 132 (1-4) : 245 - 257
[25] Temperature dependent fatigue rates in thin-film ferroelectric capacitors
Brennan, Ciaran J.
Parrella, Ronald D.
Larsen, Duane E.
Ferroelectrics, 1994, 151 (1 -4 pt 1) : 33 - 38
[26] Influence of metal-ferroelectric contacts on the space charge formation in ferroelectric thin film capacitors
Kozyrev, A. B.
Gaidukov, M. M.
Gagarin, A. G.
Altynnikov, A. G.
Razumov, S. V.
Tumarkin, A. V.
TECHNICAL PHYSICS LETTERS, 2009, 35 (07) : 585 - 588
[27] Influence of metal-ferroelectric contacts on the space charge formation in ferroelectric thin film capacitors
A. B. Kozyrev
M. M. Gaĭdukov
A. G. Gagarin
A. G. Altynnikov
S. V. Razumov
A. V. Tumarkin
Technical Physics Letters, 2009, 35 : 585 - 588
[28] Lead zirconate titanate ferroelectric thin film capacitors: Effects of surface treatments on ferroelectric properties
Chen, Ye
McIntyre, Paul C.
APPLIED PHYSICS LETTERS, 2007, 91 (07)
[29] Utilizing ferroelectric polarization differences in energy-storage thin film capacitors
Hao, Xinxing
Zhu, Zhe
Yao, Zhonghua
Hao, Hua
Cao, Minghe
Liu, Hanxing
CERAMICS INTERNATIONAL, 2023, 49 (23) : 37238 - 37244
[30] Microwave losses in metal-ferroelectric-metal thin-film capacitors
M. M. Gaĭdukov
A. G. Gagarin
A. B. Kozyrev
S. V. Razumov
A. V. Tumarkin
A. G. Altynnikov
Technical Physics Letters, 2008, 34 : 565 - 567

← 1 2 3 4 5 →