Impact of a Germanium and Carbon Preamorphization Implant on the Electrical Characteristics of NiSi/Si Contacts With a Presilicide Sulfur Implant

被引：6

作者：

Tong, Yi ^{[1
]}

Zhou, Qian ^{[1
]}

Chua, Lye Hing ^{[2
]}

Thanigaivelan, Thirumal ^{[2
]}

Henry, Todd ^{[2
]}

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[2] Varian Semicond Equipment Associates Inc, Singapore 367904, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

Carbon; germanium; ion implantation; Schottky diodes; silicides; SCHOTTKY-BARRIER HEIGHT; THERMAL-STABILITY; ION-IMPLANTATION; CMOS TECHNOLOGY; SEGREGATION; IMPROVEMENT; RESISTANCE; SILICON; FINFETS;

D O I：

10.1109/LED.2011.2167650

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports the demonstration of preamorphization implant (PAI) using germanium (Ge) and carbon (C) and its combination with presilicide sulfur (S) implant for Schottky barrier height (SBH) tuning of nickel silicide (NiSi)-silicon contacts. Ge and C PAI increases the threshold temperature for agglomeration of a NiSi film, thus enhancing its thermal stability. A presilicide S implant and its segregation at metal/semiconductor interface effectively lowers the effective electron SBH Phi(n)(B) to 0.18 eV. In addition, the distribution of reverse current in the NiSi/n-type Si contact is improved with the introduction of Ge and C PAI.

引用

页码：1734 / 1736

页数：3

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