The Fabrication and Performance of PZT Ferroelectric Films

被引：0

作者：

Zhang Xingguo ^{[1
]}

Liu Jun ^{[1
]}

Luo Ying ^{[1
]}

机构：

[1] Jiangsu Univ, Coll Mat Sci & Engn, Zhenjiang 212013, Peoples R China

来源：

RARE METAL MATERIALS AND ENGINEERING | 2008年 / 37卷

关键词：

film; ferroelectric performance; anneal;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

PZT ferroelectric films were prepared on Al2O3 substrate. It was found that acetylacetone could improve the PZT sol stability and prevent cracking of the film. The single phase of the perovskite structure was formed when the PZT film was annealed at 700 degrees C. The selection of the suitable annealed conditions could reduce the cracks in the films. The bottom Pt electrode addition also could assist the formation of the perovskite structure. The shapes of the ferroelectric loop and Pr, Ec were correlated to the annealed conditions and the thickness of the PZT films.

引用

页码：717 / 720

页数：4