Low-k silicon nitride film for copper interconnects process prepared by catalytic chemical vapor deposition method at low temperature

被引：13

作者：

Sato, H ^{[1
]}

Izumi, A

Masuda, A

Matsumura, H

机构：

[1] Japan Adv Inst Sci & Technol, Ishikawa 9231292, Japan

[2] Fujitsu Ltd, Proc Engn Dept, Mfg Technol Dev Div, Elect Devices Grp, Tado, Mie 5110192, Japan

来源：

THIN SOLID FILMS | 2001年 / 395卷 / 1-2期

关键词：

silicon nitride; catalytic chemical vapor deposition (Cat-CVD); copper interconnects;

D O I：

10.1016/S0040-6090(01)01284-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A low-temperature process for preparing low-k silicon nitride (SiN) has been successfully developed using catalytic chemical vapor deposition (Cat-CVD). A low-k SiN film, formed at 250 degreesC with a permittivity of 4, showed good Cu barrier properties. (C) 2001 Elsevier Science BN. All rights reserved.

引用

页码：280 / 283

页数：4

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