Lithium-Doping Effects in Cu(In,Ga)Se2 Thin-Film and Photovoltaic Properties

被引:16
|
作者
Ishizuka, Shogo [1 ]
Fons, Paul J. [2 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
[2] Keio Univ, Dept Elect & Elect Engn, Yokohama, Kanagawa 2238521, Japan
关键词
thin-film solar cell; alkali-metal; chalcogenide; chalcopyrite; CIGS; lithium; rubidium; SOLAR-CELLS; POSTDEPOSITION TREATMENTS; CRYSTAL-STRUCTURE; GRAIN-BOUNDARIES; NA; RUBIDIUM; CU2ZNSN(S; SE)(4); SEGREGATION; DIFFUSION; HALIDES;
D O I
10.1021/acsami.0c06284
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The beneficial effects of heavy alkali metals such as K, Rb, and Cs in enhancing Cu(In,Ga)Se-2 (CIGS) photovoltaic efficiencies are widely known, though the detailed mechanism is still open for discussion. In the present work, the effects of the lightest alkali metal, Li, on CIGS thin-film and device properties are focused upon and compared to the effects of heavy alkali metals. Till date, the beneficial effects of elemental Li on Cu2ZnSnS4 photovoltaic devices in enhancing efficiencies have been reported. On the other hand, it is shown in the present work that the beneficial effects of Li on CIGS are not so significant. In contrast to the effects of Na or Rb in enhancing CIGS(112) growth orientation, Li was revealed not to affect GIGS growth orientation. The most distinctive feature observed between Li and other alkali metals was the elemental depth profile in CIGS films. Namely, Na and heavier alkali metals show a concentration peak near the surface (relatively Cu-poor) region of CIGS films, whereas elemental Li showed no such trend, suggesting that Li has no significant effect on CIGS surface modification. Nonetheless, Li was found to have some effect in enhancing the PL peak intensity and photovoltaic performance of CIGS, though the effect is relatively small in comparison to that obtained with other alkali metals.
引用
收藏
页码:25058 / 25065
页数:8
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