Effect of dislocations on minority carrier lifetime in HgCdTe

被引：11

作者：

Gopal, V ^{[1
]}

Gupta, S ^{[1
]}

机构：

[1] Solid State Phys Lab, Delhi 110054, India

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 05期

关键词：

D O I：

10.1063/1.1644039

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This article shows that the temperature dependence of minority carrier lifetime in mercury cadmium telluride samples of differing dislocation densities can be accounted well by including the dislocation contribution in addition to the contribution of well known radiative, auger, and Shockley-Read recombination mechanisms. The dislocation contribution to the minority carrier lifetime has been calculated on the basis of a recently proposed model [V. Gopal and S. Gupta, IEEE-ED 50, 1220 (2003)] by treating dislocation as a discontinuity of the lattice. (C) 2004 American Institute of Physics.

引用

页码：2467 / 2472

页数：6

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