Active tuning of mid-infrared metamaterials by electrical control of carrier densities

被引:60
|
作者
Jun, Young Chul [1 ]
Gonzales, Edward [1 ]
Reno, John L. [1 ]
Shaner, Eric A.
Gabbay, Alon [1 ]
Brener, Igal [1 ]
机构
[1] Sandia Natl Labs, CINT, Albuquerque, NM 87185 USA
来源
OPTICS EXPRESS | 2012年 / 20卷 / 02期
关键词
NEAR-INFRARED METAMATERIALS; TRANSMISSION; MODULATION; GAAS;
D O I
10.1364/OE.20.001903
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate electrically-controlled active tuning of mid-infrared metamaterial resonances using depletion-type devices. The depletion width in an n-doped GaAs epilayer changes with an electric bias, inducing a change of the permittivity of the substrate and leading to frequency tuning of the resonance. We first present our detailed theoretical analysis and then explain experimental data of bias-dependent metamaterial transmission spectra. This electrical tuning is generally applicable to a variety of infrared metamaterials and plasmonic structures, which can find novel applications in chip-scale active infrared devices. (C)2012 Optical Society of America
引用
收藏
页码:1903 / 1911
页数:9
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