40 Gbit/s low-loss silicon optical modulator based on a pipin diode

被引：94
|
作者：
Ziebell, Melissa [1 ]
Marris-Morini, Delphine [1 ]
Rasigade, Gilles [1 ]
Fedeli, Jean-Marc [2 ]
Crozat, Paul [1 ]
Cassan, Eric [1 ]
Bouville, David [1 ]
Vivien, Laurent [1 ]
机构：
[1] Univ Paris 11, CNRS UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
[2] CEA, LETI, F-38054 Grenoble 9, France
来源：
OPTICS EXPRESS | 2012年 / 20卷 / 10期
关键词：
CARRIER-DEPLETION; PHOTONICS;
D O I：
10.1364/OE.20.010591
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
40 Gbit/s low-loss silicon optical modulators are demonstrated. The devices are based on the carrier depletion effect in a pipin diode to generate a good compromise between high efficiency, speed and low optical loss. The diode is embedded in a Mach-Zehnder interferometer, and a self-aligned fabrication process was used to obtain precise localization of the active p-doped region in the middle of the waveguide. Using a 4.7 mm (resp. 0.95 mm) long phase shifter, the modulator exhibits an extinction ratio of 6.6 dB (resp. 3.2 dB), simultaneously with an optical loss of 6 dB (resp. 4.5 dB) at the same operating point. (C)2012 Optical Society of America
引用
收藏
页码：10591 / 10596
页数：6
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