2-D Physics-Based Compact DC Modeling of Double-Gate Tunnel-FETs

被引:29
|
作者
Horst, Fabian [1 ]
Farokhnejad, Atieh [1 ]
Zhao, Qing-Tai [2 ]
Iniguez, Benjamin [3 ]
Kloes, Alexander [1 ]
机构
[1] TH Mittelhessen Univ Appl Sci, NanoP, D-35390 Giessen, Germany
[2] Forschungszentrum Julich, JARA FIT, Peter Grunberg Inst, D-52425 Julich, Germany
[3] Univ Rovira & Virgili, E-43007 Tarragona, Spain
关键词
Band-to-band (B2B) tunneling; compact modeling; double gate (DG); nanowire (NW) gate-all-around (GAA) tunnel-field effect transistors (TFET) measurements; TFET; TFETS; VOLTAGE; LOGIC;
D O I
10.1109/TED.2018.2856891
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the derivation of a compact dc modeling approach for the band-to-band tunneling current in double-gate tunnel-field effect transistors (TFETs). The physics-based model equations are solved in closed form by including 2-D effects and are implemented in the hardware description language Verilog-A. The verification of the model is done in two steps. First, the modeling approach is verified by TCAD Sentaurus simulation data of the band diagram, the transfer current, and the output current characteristics as well as the output conductance. The modeling results show a good agreement with the TCAD data. Then, measurement data of complementary nanowire gate-all-around TFET devices are utilized to verify the model and to show possible fields of application. As a part of the verification, the benefits and limitations are analyzed and discussed. The numerical stability and flexibility of the model are pointed out by performing simulations of a single-stage TFET inverter.
引用
收藏
页码:132 / 138
页数:7
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