Observation of negative differential resistance in GaAlAs single-barrier heterostructure at room temperature

被引：8

作者：

Emelett, SJ ^{[1
]}

Goodhue, WD

Karakashian, AS

Vaccaro, K

机构：

[1] Univ Massachusetts, Dept Phys & Appl Phys, Lowell, MA 01851 USA

[2] USAF, Res Lab, Sensors Directorate, Hanscom AFB, MA 01731 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 05期

关键词：

D O I：

10.1063/1.1645638

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Observation of experimental negative differential resistance at room temperature due to electron tunneling in a multiple-step single-barrier GaAlAs heterostructure is reported. Theoretical investigations of a three-step single-barrier heterostructure were conducted using the transfer matrix method and the Tsu-Esaki approach to obtain the transmission coefficients and current-voltage characteristic, respectively. The system was designed based on these calculations, and grown with molecular beam epitaxy. The diode exhibited negative differential resistance at 300 K and had a peak-to-valley current ratio above unity, which was in agreement with the predicted values. (C) 2004 American Institute of Physics.

引用

页码：2930 / 2932

页数：3

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