Modulators for Terahertz Communication: The Current State of the Art

被引:112
作者
Ma, Z. T. [1 ]
Geng, Z. X. [2 ,3 ]
Fan, Z. Y. [3 ]
Liu, J. [4 ]
Chen, H. D. [3 ]
机构
[1] Minzu Univ China, Coll Sci, Beijing 100081, Peoples R China
[2] Minzu Univ China, Sch Informat Engn, Beijing 100081, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[4] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
BROAD-BAND; VANADIUM DIOXIDE; METAMATERIAL; PHASE; TECHNOLOGY; TRANSITION; SILICON;
D O I
10.34133/2019/6482975
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
With the increase of communication frequency, terahertz (THz) communication technology has been an important research field; particularly the terahertz modulator is becoming one of the core devices in THz communication system. The modulation performance of a THz communication system depends on the characterization of THz modulator. THz modulators based on different principles and materials have been studied and developed. However, they are still on the way to practical application due to low modulation speed, narrow bandwidth, and insufficient modulation depth. Therefore, we review the research progress of THz modulator in recent years and evaluate devices critically and comprehensively. We focus on the working principles such as electric, optical, optoelectrical, thermal, magnetic, programmable metamaterials and nonlinear modulation methods for THz wave with semiconductors, metamaterials, and 2D materials (such as graphene, molybdenum disulfide, and tungsten disulfide). Furthermore, we propose a guiding rule to select appropriate materials and modulation methods for specific applications in THz communication.
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页数:22
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