Some remarks on the undercooling of the Si(111) facet and the "Monte Carlo modeling of silicon crystal growth" by Kirk M. Beatty & Kenneth A. Jackson, J. Crystal Growth 211 (2000) 13

被引：23

作者：

Miller, W. ^{[1
]}

机构：

[1] Leibniz Inst Crystal Growth IKZ, D-12489 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 325卷 / 01期

关键词：

Growth models; SOLIDIFICATION; MELT;

D O I：

10.1016/j.jcrysgro.2011.03.031

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The undercooling at the Si(1 1 1) facet is of great importance, e.g. in explaining effects during grain growth of multicrystalline Si. Data of experiments spread over a wide range and there is only one paper published on numerical simulations (by Beatty and Jackson). However, there are some discrepancies in this paper, which are discussed here. (C) 2011 Elsevier B.V. All rights reserved.

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页码：101 / 103

页数：3

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