Self-regulation of Bi/(Bi plus Fe) ratio in metalorganic chemical vapor deposition of BiFeO3 thin films

被引：5

作者：

Fujisawa, Hironori ^{[1
,2
,3
]}

Yoshimura, Nao ^{[1
]}

Nakashima, Seiji ^{[1
,2
,3
]}

Shimizu, Masaru ^{[1
,2
]}

机构：

[1] Univ Hyogo, Grad Sch Engn, Dept Elect & Comp Sci, Himeji, Hyogo 6712280, Japan

[2] Univ Hyogo, Grad Sch Engn, Res Ctr Nanomicro Struct Sci & Engn, Himeji, Hyogo 6712280, Japan

[3] Univ Hyogo, Adv Med Engn Ctr, Himeji, Hyogo 6712280, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 10期

关键词：

FERROELECTRIC PROPERTIES; ELECTRICAL-PROPERTIES; DOMAIN-WALLS; POLARIZATION; GROWTH; MOCVD; PHASE;

D O I：

10.7567/JJAP.56.10PF05

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metalorganic chemical vapor deposition (MOCVD) is one of the suitable techniques for practical applications of BiFeO3 films. To develop the potential of MOCVD as a device fabrication process, we investigated the relationship between the film and gas compositions, and the growth under highly oxidizing conditions using O-2 and O-3 gases. In the growth of epitaxial BiFeO3 thin films on SrRuO3-covered 4 degrees vicinal SrTiO3(001) at 620 degrees C, the self-regulation of the film composition was achieved for Bi and Fe precursor supply ratios between 62.1 to 78.5% under O-2 and 56.1 to 73.2% under 5 wt% O-3-mixed O-2 atmospheres. The leakage was very sensitive to the precursor supply ratio and oxidizing gas. 150-nm-thick MOCVD-BiFeO3 films grown using O-2+O-3 gas showed the minimum leakage current density of 2.3 x 10(-7) A/cm(2) at +1V. The highly oxidizing growth conditions using O-3 can suppress the leakage while precise composition control is required. (C) 2017 The Japan Society of Applied Physics

引用

页数：5

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