Electrical and Structural Properties of Metal-Oxide-Semiconductor (MOS) Devices with Pt/Ta2O5 Gate Stacks

被引：0
|
作者：
Lee, Hoon-Ki [1 ]
Chandra, S. V. Jagadeesh [1 ]
Shim, Kyu-Hwan [1 ]
Yoon, Jong-Won [2 ]
Choi, Chel-Jong [1 ]
机构：
[1] Chonbuk Natl Univ, Chonju, South Korea
[2] Dankook Univ, Seoul, South Korea
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2011年 / E94C卷 / 05期
关键词：
Ta2O5; MOS; flat band voltage; effective metal workfunction; EOT; WORK FUNCTION MODULATION; THIN-FILMS; TA2O5; DENSITY; DIELECTRICS;
D O I：
10.1587/transele.E94.C.846
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We fabricated metal-oxide-semiconductor (MOS) devices with Pt/Ta2O5 gate stacks and investigated their electrical and structural properties. As increasing RF magnetron sputter-deposition time of Ta2O5 film, the values of equivalent oxide thickness (EOT) and flat band voltage (V-FB) increase whilst the density of interfacial trap (D-it) gradually decreases. The effective metal work function (Phi(m,eff)) of Pt metal gate, extracted from the relations of EOT versus V-FB are calculated to be similar to 5.29 eV, implying that Fermi-level pinning in Ta2O5 gate dielectric is insignificant.
引用
收藏
页码：846 / 849
页数：4
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