Electrical and Structural Properties of Metal-Oxide-Semiconductor (MOS) Devices with Pt/Ta2O5 Gate Stacks

被引：0

作者：

Lee, Hoon-Ki ^{[1
]}

Chandra, S. V. Jagadeesh ^{[1
]}

Shim, Kyu-Hwan ^{[1
]}

Yoon, Jong-Won ^{[2
]}

Choi, Chel-Jong ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Chonju, South Korea

[2] Dankook Univ, Seoul, South Korea

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2011年 / E94C卷 / 05期

关键词：

Ta2O5; MOS; flat band voltage; effective metal workfunction; EOT; WORK FUNCTION MODULATION; THIN-FILMS; TA2O5; DENSITY; DIELECTRICS;

D O I：

10.1587/transele.E94.C.846

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated metal-oxide-semiconductor (MOS) devices with Pt/Ta2O5 gate stacks and investigated their electrical and structural properties. As increasing RF magnetron sputter-deposition time of Ta2O5 film, the values of equivalent oxide thickness (EOT) and flat band voltage (V-FB) increase whilst the density of interfacial trap (D-it) gradually decreases. The effective metal work function (Phi(m,eff)) of Pt metal gate, extracted from the relations of EOT versus V-FB are calculated to be similar to 5.29 eV, implying that Fermi-level pinning in Ta2O5 gate dielectric is insignificant.

引用

页码：846 / 849

页数：4

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