d An approach to determine cutoff frequency and maximum oscillation frequency of common emitter heterojunction bipolar transistor

被引：1
|
作者：
Zhang, Ao [1 ]
Gao, Jianjun [1 ]
机构：
[1] East China Normal Univ, Sch Informat & Sci Technol, Shanghai 200241, Peoples R China
来源：
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS | 2020年 / 33卷 / 03期
基金：
中国国家自然科学基金;
关键词：
heterojunction bipolar transistor; small signal model; parameter extraction; short-circuit current gain; unilateral power gain; CIRCUIT; PERFORMANCE; PARAMETERS; RESISTANCE; MODEL; HBTS;
D O I：
10.1002/jnm.2545
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Analytical expressions for the short-circuit current gain and unilateral power gain of common emitter heterojunction bipolar transistor (HBT) are presented in this paper. These expressions are derived from a simplified -type small signal equivalent circuit model, which takes into account the influence of the extrinsic resistances and base-collector capacitance distributed nature. Good agreement is obtained between measured and calculated results for both two indium phosphide (InP) HBT devices and a gallium arsenide (GaAs) HBT device over a wide range of bias points.
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页数：11
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