Characteristics of perylene-based organic thin-film transistor with octadecyltrichlorosilane monolayer

被引:11
|
作者
Park, DS
Kang, SJ
Kim, HJ
Jang, MH
Noh, M
Yoo, KH
Whang, CN [1 ]
Lee, YS
Lee, MH
机构
[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
[2] Hanbat Natl Univ, Div Informat Commun & Comp Engn, Taejon 305719, South Korea
[3] Yonsei Univ, Coll Liberal Arts & Sci, Dept Phys, Wonju 220840, Gangwon, South Korea
来源
基金
新加坡国家研究基金会;
关键词
D O I
10.1116/1.1924418
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We fabricated perylene-based organic thin-film transistor (OTFT) with an octadecyltrichlorosilane (OTS) monolayer in an ultrahigh vacuum condition. By current-voltage characteristics, the saturation current and the field effect mobility of OTS-OTFT (gold/perylene/OTS/SiO2/p(+)-Si) increased over similar to 100 times in comparison with normal-OTFT (gold/perylene/SiO2/p(+)-Si), and on/off ratio increased over similar to 100 times. The saturation current, field effect mobility, and on/off ratio were > 1 mu A, 0.042 cm(2)/V s, and > 10(6), respectively. The uniformity of the OTS layer was confirmed by x-ray reflectivity. Perylene thin films on SiO2 and OTS/SiO2 were compared by atomic force microscopy, scanning electron microscopy, x-ray diffraction, and x-ray photoscopy. (c) 2005 American Vacuum Society.
引用
收藏
页码:926 / 929
页数:4
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