ZnO-sheathed SiOx nanowires:: Annealing effect

被引：9
|
作者：
Kim, Hyoun Woo [1 ]
Shim, Seung Hyun [1 ]
Lee, Jong Woo [1 ]
Lee, Chongmu [1 ]
Jeoung, Sae Chae [2 ]
机构：
[1] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea
[2] Korea Res Inst Stand & SCi, Div Adv Technol, Taejon 305340, South Korea
来源：
OPTICAL MATERIALS | 2008年 / 30卷 / 07期
关键词：
ZnO; nanowires; thermal annealing;
D O I：
10.1016/j.optmat.2007.05.052
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This study reported the preparation of ZnO-coated SiOx, nanowires and investigated changes in the structural and photoluminescence (PL) characteristics resulting from application of a thermal annealing process. While X-ray diffraction (XRD) analysis revealed the annealing-induced transformation of ZnO to Zn2SiO4, transmission electron microscopy (TEM) observation suggested that shell layer tended to be transformed to nanoparticle-like structures by thermal annealing. Thermal annealing induced the changes in the shape of the PL emission spectrum. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：1221 / 1224
页数：4
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