The influence of Sb doping on the structural, optical and electrical properties of tin oxide thin film

Antimony-doped Tin Oxide (Sb:SnO2), shortened as ATO, has become more popular due to their great technological importance. ATO was considered as important transparent conducting material for optoelectronic devices and sensors application because of its unique and special characteristic such as high transparency in visible region, and high electrons concentration and mobility. In this study, the Sb:SnO2 thin film have been fabricated with low cost and simple ultrasonic spray pyrolysis method. SnO2 thin film was deposited with three different Sb concentrations namely 1, 2, and 3 wt%. The structural, morphological, optical and electrical properties of this film have been analyzed by using X-ray diffraction, scanning electron microscopy, UV-VIS and four point probe instruments. Based on the optical and electrical properties characterization, the best concentration of Sb doping was 2wt% because its transmittance was above 80% at all wavelength range measured, and the electrical resistivity was quite low, at 0.663 x 10(-3) Omega cm.