Temperature dependence anisotropic photoconductivity in 2H-MoSe2 single crystals

被引：5
|
作者：
Lee, Y. C. [2 ]
Hu, S. Y. [1 ]
Tiong, K. K. [3 ]
Shen, J. L. [4 ]
Chen, K. W. [4 ]
Huang, Y. S. [5 ]
机构：
[1] Tung Fang Inst Technol, Dept Elect Engn, Kaohsiung 82941, Taiwan
[2] Tung Nan Inst Technol, Res Ctr Micro Nano Technol, Dept Elect Engn, Taipei 22202, Taiwan
[3] Natl Taiwan Ocean Univ, Dept Elect Engn, Chilung 20224, Taiwan
[4] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Tao Yuan, Taiwan
[5] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 10607, Taiwan
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2008年 / 448卷 / 1-2期
关键词：
semiconductor; anisotropy;
D O I：
10.1016/j.jallcom.2006.10.058
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Single crystals of 2H-MoSe2 were investigated by the anisotropic photoconductivity (PC) measurements as a function of temperature in the range of 12-300 K. A significant shift towards lower energy has been observed in the PC spectra of the edge plane with respect to the van der Waals plane. The anisotropy in the indirect energy gap is being attributed to crystal anisotropy. The parameters that describe the temperature dependence of the anisotropic indirect energy gap are evaluated and discussed utilizing the Varshni and Manoogian-Woolley semi-empirical relationships. The Debye temperature of the sample has also been estimated by the fitted values. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：44 / 48
页数：5
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