A Critical Review of Current Studies on Hydrogen Defect in Diluted Magnetic Semiconductors and Relative Ferroelectric Materials for Smart Electronic Applications

被引：0
作者：
Thoan, Nguyen Hoang [1 ]
Khoa, Bui Viet [1 ]
Dung, Dang Duc [1 ]
机构：
[1] Ha Noi Univ Sci & Technol, Sch Engn Phys, Multifunct Ferro Mat Lab, 1 Dai Co Viet Rd, Hanoi, Vietnam
来源：
JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2022年 / 35卷 / 11期
关键词：
Hydrogen; Diluted magnetic semiconductor; Multiferroics; Ferroelectric; ROOM-TEMPERATURE FERROMAGNETISM; FE-DOPED ZNO; ELECTRICAL CHARACTERIZATION; INDUCED DEGRADATION; EPITAXIAL-GROWTH; THIN-FILMS; MN; CO; PASSIVATION; SILICON;
D O I：
10.1007/s10948-022-06399-y
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Experimental and theoretical studies on hydrogen in diluted magnetic semiconductors and related materials have been reviewed. A strong modification of magnetic order has been found by co-doping of hydrogen and magnetic ions in diluted magnetic semiconductors, which depended on the states of hydrogen acting in both crystalline and amorphous. In addition, the hydrogen was found to be strongly active with the magnetic ions resulting in modification of the electrical, magnetic, band structure properties, etc. We expect that our review could help to make a direction for the experimental and theoretical guide to develop advanced functional materials in silicon technology.
引用
收藏
页码：3051 / 3065
页数：15
相关论文
共 183 条
  • [1] Effect of hydrogen on Pb(Zr, Ti)O3-based ferroelectric capacitors
    Aggarwal, S
    Perusse, SR
    Tipton, CW
    Ramesh, R
    Drew, HD
    Venkatesan, T
    Romero, DB
    Podobedov, VB
    Weber, A
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (14) : 1973 - 1975
  • [2] Enhanced ferromagnetic properties of diluted Fe doped ZnO with hydrogen treatment
    Ahn, Geun Young
    Park, Seung-Iel
    Kim, Chul Sung
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2006, 303 (02) : E329 - E331
  • [3] Preparation of Fe-doped ZnO ferromagnetic semiconductor by sol-gel method with hydrogen treatment
    Ahn, GY
    Park, SI
    Kim, SJ
    Lee, BW
    Kim, CS
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 2005, 41 (10) : 2730 - 2732
  • [4] Mossbauer studies of ferromagnetism in Fe-doped ZnO magnetic semiconductor
    Ahn, GY
    Park, SI
    Shim, IB
    Kim, CS
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2004, 282 : 166 - 169
  • [5] Energy levels of atomic hydrogen in germanium from ab-initio calculations
    Almeida, L. M.
    Coutinho, J.
    Torres, V. J. B.
    Jones, R.
    Briddon, P. R.
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (4-5) : 503 - 506
  • [6] Electrical characterization of 1.8 MeV proton-bombarded ZnO
    Auret, FD
    Goodman, SA
    Hayes, M
    Legodi, MJ
    van Laarhoven, HA
    Look, DC
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (19) : 3074 - 3076
  • [7] Effects of N2O plasma treatment on magnetic properties of (Zn, Mn)O nanorods
    Baik, Jeong Min
    Kang, Tae Won
    Lee, Jong-Lam
    [J]. NANOTECHNOLOGY, 2007, 18 (09)
  • [8] Effects of hydrogen incorporation in GaMnN
    Baik, KH
    Frazier, RM
    Thaler, GT
    Abernathy, CR
    Pearton, SJ
    Kelly, J
    Rairigh, R
    Hebard, AF
    Tang, W
    Stavola, M
    Zavada, JM
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (26) : 5458 - 5460
  • [9] STRUCTURE OF ACCEPTOR-HYDROGEN AND DONOR-HYDROGEN COMPLEXES IN SILICON FROM UNIAXIAL-STRESS STUDIES
    BERGMAN, K
    STAVOLA, M
    PEARTON, SJ
    HAYES, T
    [J]. PHYSICAL REVIEW B, 1988, 38 (14): : 9643 - 9648
  • [10] Manganese-hydrogen complexes in Ga1-xMnxN
    Bihler, C.
    Gerstmann, U.
    Hoeb, M.
    Graf, T.
    Gjukic, M.
    Schmidt, W. G.
    Stutzmann, M.
    Brandt, M. S.
    [J]. PHYSICAL REVIEW B, 2009, 80 (20)
12345678910