Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition

被引：10
|
作者：
Zhu, B. L. [1 ]
Zhu, S. J. [1 ]
Zhao, X. Z. [2 ]
Su, F. H. [3 ]
Li, G. H. [3 ]
Wu, X. G. [3 ]
Wu, J. [1 ]
机构：
[1] Wuhan Univ Sci & Technol, Minist Educ, Key Lab Ferrous Met & Resources Utilizat, Wuhan 430081, Peoples R China
[2] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 04期
基金：
中国博士后科学基金;
关键词：
conductivity; doping; photoluminescence; pulsed laser deposition; ZnO; ELECTRICAL-PROPERTIES; OXYGEN-PRESSURE; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE; LUMINESCENCE; VIOLET; GROWTH; FABRICATION; ABSORPTION; DEPENDENCE;
D O I：
10.1002/pssa.201026626
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Undoped and 0.56 at.% Sb-doped ZnO thin films were prepared by pulsed laser deposition (PLD) under vacuum and an oxygen pressure of 0.2 Pa with sintered ceramic as targets. The effects of Sb doping and deposition atmosphere on structure and optical-electrical properties of the films were studied by X-ray diffraction (XRD), scanning probe microscopy (SPM), Hall Effect measurement, transmittance spectra, and photoluminescence (PL) spectra. The results showed that undoped and Sb-doped films deposited under vacuum had better crystallinity, higher carrier concentration, lower bandgap (E-g), and single violet emission as compared with the films deposited in an oxygen pressure of 0.2 Pa. Compared with undoped ZnO film, Sb-doped ZnO film had higher carrier concentration and almost uniform E-g in both atmospheres, and it exhibited obviously improved crystallinity and green emission under an oxygen pressure of 0.2 Pa. The results implied that the deposition atmosphere strongly affected the growth kinetics of the films and intrinsic defect in the films, and Sb doping seemed also to affect the growth kinetics of the films under certain conditions and introduced Sb-Zn defects and possibly Sb-Zn-2V(Zn) defects, thus the structure and optical-electrical properties of the films were modified by the deposition atmosphere and Sb doping. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：843 / 850
页数：8
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