Investigation of G-band Extended Interaction Klystron Broadband Beam-wave Interaction

Extended Interaction Klystron (EIK) is a high power, high efficiency and high gain vacuum electronic device (VED) based on high power klystron, which uses extended interaction cavity technology to achieve high power, high efficiency and high gain in millimeter wave and terahertz wave band. In this paper, the G-band high-power EIK high-frequency interaction circuit is designed and optimized, and the PIC three-dimensional particle simulation software is used to simulate it. The calculation results show that the terahertz power output with electronic efficiency of more than 6% and peak power of more than 278W is obtained when the operating voltage is 18.4 kV, the beam current is 0.25A and the center frequency is 234.2 GHz. The -3 dB bandwidth is more than 250MHz and the gain is more than 34 dB. This work is of great significance to the development of high-power terahertz EIK and its application in national defense, satellite, high-resolution radar and other fields.