Triple-junction amorphous/microcrystalline silicon solar cells: Towards industrially viable thin film solar technology

被引：12

作者：

Multone, X. ^{[1
]}

Fesquet, L. ^{[1
]}

Borrello, D. ^{[1
]}

Romang, D. ^{[1
]}

Choong, G. ^{[1
]}

Vallat-Sauvain, E. ^{[1
]}

Charriere, M. ^{[1
]}

Billet, A. ^{[1
]}

Boucher, J. -F. ^{[1
]}

Steinhauser, J. ^{[1
]}

Orhan, J. -B. ^{[1
]}

Monnard, R. ^{[1
]}

Cardoso, J. -P. ^{[1
]}

Charitat, G. ^{[1
]}

Dehbozorgi, B. ^{[1
]}

Guillot, N. ^{[1
]}

Monteduro, G. ^{[1
]}

Marmelo, M. ^{[1
]}

Semenzi, R. ^{[1
]}

Benagli, S. ^{[1
]}

Meier, J. ^{[1
]}

机构：

[1] TEL Solar Lab SA, CH-2000 Neuchatel, Switzerland

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2015年 / 140卷

关键词：

Triple junctions; Amorphous silicon; Microcrystalline silicon; MICROCRYSTALLINE SILICON; SURFACE-MORPHOLOGY; TEMPERATURE; GROWTH;

D O I：

10.1016/j.solmat.2015.04.038

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The status of the development of triple-junction (amorphous silicon/microcrystalline/microcrystalline silicon) test cells fabricated with up-scalable PECVD processes is given. A first draft of novel rather flat scattering superstrates with an optimized high bandgap amorphous silicon top cell including a carbon-free buffer at the p/i interface is presented. The careful optimization of the interfaces (including suboxide doped layers and buffers) and of the bulk crystallinity of the middle and bottom microcrystalline sub-cells allowed to reach a stabilized efficiency of 13.5 % (after 1000 h light-soaking, internal measurement). Sub-cells individual developments are discussed and their specific integration into the full triple-junction device with its optimization for AM1.5G illumination relying on a partly LED supported solar simulator characterization is presented. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：388 / 395

页数：8

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