Overcoming Biomolecule Location-Dependent Sensitivity Degradation Through Point and Line Tunneling in Dielectric Modulated Biosensors

被引：43

作者：

Dwivedi, Praveen ^{[1
]}

Kranti, Abhinav ^{[1
]}

机构：

[1] Indian Inst Technol Indore, Low Power Nanoelect Res Grp, Discipline Elect Engn, Indore 453552, Madhya Pradesh, India

来源：

IEEE SENSORS JOURNAL | 2018年 / 18卷 / 23期

关键词：

Pocket TFET; biosensor; lateral and vertical tunneling; sensitivity; FIELD-EFFECT TRANSISTOR; LABEL-FREE BIOSENSOR; PERFORMANCE ASSESSMENT; ELECTRICAL DETECTION; MOS-TRANSISTOR; FET; NANOGAP; SIMULATION; STREPTAVIDIN; PROTEINS;

D O I：

10.1109/JSEN.2018.2872016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report on the utility of pocket tunnel field-effect transistors (TFETs) for use as dielectric-modulated biosensor. It is shown that incorporation of a pocket doping in the source facilitates lateral as well as vertical tunneling, which allows biomolecules located at various positions within the cavity to cause a detectable shift in current-voltage characteristics. Considering realistic cases pertaining to varied locations of biomolecules within the cavity and low fill-in (50%) factor, pocket TFET shows enhanced sensitivity over conventional TFET, which can be further improved by lowering the pocket doping. Sensitivity of a pocket TFET maintains detectable values over a wide range of biomolecule locations within the cavity, thereby showing potential for next generation transistor-based biosensor.

引用

页码：9604 / 9611

页数：8

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