Distinguishing the inverse spin Hall effect photocurrent of electrons and holes by comparing to the classical Hall effect

被引：1

作者：

Zhang, Yang ^{[1
,2
]}

Liu, Yu ^{[1
,2
]}

Zeng, Xiao Lin ^{[1
,2
]}

Wu, Jing ^{[1
,2
]}

Yu, Jin Ling ^{[3
]}

Chen, Yong Hai ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[3] Fuzhou Univ, Sch Phys & Informat Engn, Inst Micro Nano Devices & Solar Cells, Fuzhou, Peoples R China

来源：

OPTICS EXPRESS | 2020年 / 28卷 / 06期

关键词：

TRANSPORT; POLARIZATION;

D O I：

10.1364/OE.387692

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The photo-excited electrons and holes move in the same direction in the diffusion and in the opposite direction in the drift under an electric field. Therefore, the contribution to the inverse spin Hall current of photo-excited electrons and holes in the diffusion regime is different to that in the drift regime under electric field. By comparing the classical Hall effect with the inverse spin Hall effect in both diffusion and drift regime, we develop an optical method to distinguish the contributions of electrons and holes in the inverse spin Hall effect. It is found that the contribution of the inverse spin Hall effect of electrons and holes in an InGaAs/AlGaAs un-doped multiple quantum well is approximately equal at room temperature. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：8331 / 8340

页数：10