6-10 GHz ultra-wideband CMOS LNA

被引：13

作者：

Battista, M. ^{[1
]}

Gaubert, J. ^{[1
]}

Egels, A. ^{[1
]}

Bourdel, S. ^{[1
]}

Barthelemy, H. ^{[1
]}

机构：

[1] Univ Aix Marseille 1, CNRS, L2MP, UMR 6137, F-13451 Marseille 20, France

来源：

ELECTRONICS LETTERS | 2008年 / 44卷 / 05期

关键词：

D O I：

10.1049/el:20082982

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-stage matched ultra-wideband CMOS low noise amplifier (LNA) is presented. The LNA is designed to achieve a low noise figure with high voltage gain. The LNA fabricated in a 0.13 mu m CMOS process shows a 3.9 dB average noise figure with a 27 dB voltage gain in the 6-10 GHz frequency band with a power consumption of 14 mW.

引用

页码：343 / 344

页数：2

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