6-10 GHz ultra-wideband CMOS LNA

被引：13
|
作者：
Battista, M. [1 ]
Gaubert, J. [1 ]
Egels, A. [1 ]
Bourdel, S. [1 ]
Barthelemy, H. [1 ]
机构：
[1] Univ Aix Marseille 1, CNRS, L2MP, UMR 6137, F-13451 Marseille 20, France
来源：
ELECTRONICS LETTERS | 2008年 / 44卷 / 05期
关键词：
D O I：
10.1049/el:20082982
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A two-stage matched ultra-wideband CMOS low noise amplifier (LNA) is presented. The LNA is designed to achieve a low noise figure with high voltage gain. The LNA fabricated in a 0.13 mu m CMOS process shows a 3.9 dB average noise figure with a 27 dB voltage gain in the 6-10 GHz frequency band with a power consumption of 14 mW.
引用
收藏
页码：343 / 344
页数：2
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